12吋矽晶圓
12吋矽晶圓
Diameter : 300± 0.2mm
Growth Method: CZ
Thickness: 775± 25um
Type/Dopant: p
Resistivity: 1-10ohm-cm
Orientation : <100>
Front side Surface: Polished
Back side Surface :Etched
TTV: ≦20um
bow<50 um
04-23505159
圖片提供 - 瑞鎔工業
